Semiconductor device, semiconductor package for use therein, and manufacturing method thereof

ABSTRACT

A semiconductor package includes a substrate for mounting and fixing a semiconductor chip thereon and a connecting pattern. The substrate is provided with an elongate opening formed therein. The semiconductor chip is fixed with its surface being mounted on the substrate and with its electrode being aligned within the elongate opening. The electrode of the semiconductor chip is electrically connected to the connecting pattern via wires through the elongate opening. The elongate opening and the wires are sealed with resin.

This is a divisional application of application Ser. No. 11/581,096,filed Oct. 16, 2006, which is a continuation application of applicationSer. No. 10/690,627, filed Oct. 23, 2003, now U.S. Pat. No. 7,129,587,which is a divisional application of application Ser. No. 09/981,891,filed Oct. 19, 2001, now U.S. Pat. No. 6,661,099, which is a divisionalapplication of Ser. No. 09/689,824, filed Oct. 13, 2000, now U.S. Pat.No. 6,890,796, which is a divisional application of application Ser. No.09/062,720 filed Apr. 20, 1998, now U.S. Pat. No. 6,175,159, which arehereby incorporated by reference in their entirety for all purposes.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a small size semiconductor package, andmore particularly, to a semiconductor package of substantially the samesize as a semiconductor chip referred to as a chip size package, asemiconductor device using the semiconductor device, and a manufacturingmethod of the semiconductor device.

2. Description of the Related Art

These days, various apparatus including semiconductor devices,particularly portable apparatus and movable apparatus are beingminiaturized and lightened. Semiconductor devices for use in theseapparatus are thus desired to be miniaturized and lightened accordingly.

In order to meet the demands, a package of substantially the same sizeas a semiconductor chip referred to as a chip size package (hereinafterreferred to as CSP) has recently been proposed, and some semiconductordevices using such a chip size package are implemented as products.

As a semiconductor device formed with a semiconductor chip mounted on aCSP, for example, as shown in FIG. 8, one in which a semiconductor chip3 is mounted and fixed via bumps 2 on a semiconductor package 1 isknown. In this semiconductor device, the semiconductor package 1comprises a substrate 4, a conductive connecting pattern 5 formed on oneside of the substrate 4, a conductive connecting pattern 6 formed on theother side of the substrate 4, and a wiring material 7 formed so as topierce the substrate 4 for the purpose of making the connecting pattern5 electrically connected to the connecting pattern 6. As the material ofthe substrate 4, ceramics are mainly used for the purpose of makingsmaller the difference of the coefficient of thermal expansion betweenthe semiconductor chip 3 and the substrate 4 and thus making smaller thethermal stress to be applied to the bumps 2 and the semiconductorelement 3.

The semiconductor chip 3 is fixed to the substrate 4 of thesemiconductor package 1 thus structured with the conductive connectingpattern 5 formed on the one side of the substrate 4 being electricallyconnected thereto via the bumps 2 provided on a surface 3 a where theelement is formed. External connecting terminals 8 such as solder ballsfor bonding the conductive connecting pattern 6 to a mother board (notshown) are fixed to the conductive connecting pattern 6 formed on theother side of the substrate 4. By this, the bumps 2 of the semiconductorchip 3 are electrically connected to the external connecting terminals Bvia the connecting pattern 5, the wiring material 7, and the connectingpattern 6.

The semiconductor chip 3 thus mounted on the semiconductor package 1 isintegrally fixed to the semiconductor package 1 by sealing the wholeperiphery of the junction between the substrate and the semiconductorchip 3 with resin 9 referred to as underfile. It is to be noted that theresin 9 referred to as underfile also performs a function to dispersethe above-mentioned thermal stress due to the difference of thecoefficient of thermal expansion between the substrate 4 and thesemiconductor chip 3.

FIG. 9 illustrates another example of a semiconductor device formed witha semiconductor element mounted on a CSP. In FIG. 9, a semiconductordevice 10 is generally referred to as a chip on board (COP). Thesemiconductor device 10 is formed by mounting and fixing a semiconductorchip 13 via adhesive 12 or the like on a semiconductor package 11.

The semiconductor package 11 comprises a substrate 14 the material ofwhich is glass epoxy resin or the like, a conductive connecting pattern15 formed on one side the substrate 14, a conductive connecting pattern16 formed on the other side of the substrate 14, and a wiring material17 formed so as to pierce the substrate 14 for the purpose of making theconnecting pattern 15 electrically connected to the connecting pattern16.

A surface opposite to a surface 13 a where the element is formed of thesemiconductor chip 13 is fixed with the adhesive 12 to one side of thesubstrate 14 of the semiconductor package 11 thus structured. Further,an electrode (not shown) formed on the surface 13 a where the element isformed of the semiconductor chip 13 is electrically connected to theconnecting pattern 15 of the semiconductor package 11 via wires 18.External connecting terminals 19 such as solder balls for bonding theconductive connecting pattern 16 to a mother board (not shown) are fixedto the conductive connecting pattern 16 formed on the other side of thesubstrate 14. By this, the electrodes of the semiconductor chip 13 areelectrically connected to the external connecting terminals 19 via theconnecting pattern 15, the wiring material 17, and the connectingpattern 16. The semiconductor package 11 with the semiconductor chip 13thus mounted thereon is further provided with resin 20 covering the oneside of the substrate 14 and the semiconductor element 13 for thepurpose of protecting the surface 13 a where the element is formed andthe wires 18. By this, the semiconductor chip 13 and the wires 18 aresealed with the resin 20.

However, with the semiconductor device shown in FIG. 8, in order todecrease the thermal stress between the substrate 4 and thesemiconductor chip 3, ceramics, which are expensive, have to be used asthe material of the substrate 4, leading to high cost as a whole, whichis a problem to be solved.

Further, with the semiconductor device 10 shown in FIG. 9, although,since the thermal stress between the substrate 14 and the semiconductorchip 13 can be absorbed by the wires 18, glass epoxy resin, which isinexpensive, can be used as the material of the substrate 14, since thewires 18 are disposed so as to go around to the outer peripheral side ofthe semiconductor chip 13 in this structure, the size of thesemiconductor device 10 as a whole with respect to the semiconductorchip 13 is large, and thus, the semiconductor device 10 can notsufficiently meet the demands for miniaturizing and thinning thesemiconductor device.

SUMMARY OF THE INVENTION

The present invention is made in view of the above, and therefore anobject of the invention is to provide a semiconductor device which is ofsubstantially the same size as a semiconductor chip, which thussufficiently meets the demands for miniaturizing and thinning thesemiconductor device, and which, at the same time, can be manufacturedat a low cost, a manufacturing method thereof, and a semiconductorpackage suitably used in manufacturing the semiconductor device.

According to one aspect of the present invention, in order to solve theabove-mentioned problem, a semiconductor package is comprised of asubstrate for mounting a semiconductor chip thereon to fix the side of asurface where the element is formed of the semiconductor chip to oneside thereof, and a connecting pattern provided on the other side of thesubstrate for electrical connection to the semiconductor chip, thesubstrate being provided with an elongate opening formed from the oneside to the other side of the substrate.

With this semiconductor package, since an elongate opening is formed inthe substrate and the connecting pattern is provided on the side of thesubstrate opposite to the side on which the surface where the element isformed of the semiconductor chip is mounted, an electrode formed on thesurface where the element is formed of the semiconductor chip and theconnecting pattern can be bonded with wires through the elongateopening. Accordingly, wires can be disposed without going around to theouter peripheral side of the semiconductor chip. This eliminates thenecessity of securing space for the wires on the outer peripheral sideof the semiconductor element.

Further, since wire bonding can be carried out, the wires can absorb thedifference of the coefficient of thermal expansion between thesemiconductor chip and the substrate, which makes it possible to use aninexpensive resin substrate instead of an expensive ceramics substrate.

According to another aspect of the present invention, in order to solvethe above-mentioned problem, in a semiconductor device, a semiconductorpackage is comprised of a substrate for mounting a semiconductor chipthereon to fix the semiconductor to one side thereof, and a connectingpattern provided on the other side of the substrate, the substrate beingprovided with an elongate opening formed from the one side to the otherside of the substrate, a surface where the element is formed of thesemiconductor chip being mounted on the one side of the substrate, anelectrode of the semiconductor chip being fixed to the one side so as tobe within the elongate opening and being electrically connected to theconnecting pattern via wires through the elongate opening, and theelongate opening and the wires being sealed with resin.

With this semiconductor device, since the semiconductor package of thepresent invention described above is used, and the electrode formed onthe surface where the element is formed of the semiconductor chip andthe connecting pattern of the substrate are bonded with wires throughthe elongate opening, the wires can be disposed without going around tothe outer peripheral side of the semiconductor chip. This eliminates thenecessity of space for the wires on the outer peripheral side of thesemiconductor chip.

Further, since the semiconductor chip and the substrate are bonded withthe wires, the wires can absorb the difference of the coefficient ofthermal expansion between the semiconductor chip and the substrate,which makes it possible to use an inexpensive resin substrate instead ofan expensive ceramics substrate.

According to still another aspect of the present invention, in order tosolve the above-mentioned problem, a method of manufacturing asemiconductor device is comprised of the steps of preparing asemiconductor package structured by providing a substrate for mounting asemiconductor chip thereon to fix the semiconductor chip to one sidethereof and a connecting pattern provided on the other side of thesubstrate and by forming an elongate opening from the one side to theother side of the substrate, fixing a surface where the element isformed of the semiconductor chip on the one side of the substrate of thesemiconductor package such that an electrode of the semiconductor chipis within the elongate opening, electrically connecting the connectingpattern and the electrode of the semiconductor chip via wires throughthe elongate opening, and sealing the elongate opening and the wireswith resin.

With this method of manufacturing a semiconductor device, since thesemiconductor package of the present invention described above is used,and the electrode formed on the surface where the element is formed ofthe semiconductor chip and the connecting pattern of the substrate arebonded with wires through the elongate opening, the wires can bedisposed without going around to the outer peripheral side of thesemiconductor chip. This eliminates the necessity of space for the wireson the outer peripheral side of the semiconductor chip.

Further, since the semiconductor chip and the substrate are bonded withthe wires, the wires can absorb the difference of the coefficient ofthermal expansion between the semiconductor chip and the substrate,which makes it possible to use an inexpensive resin substrate instead ofan expensive ceramics substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a sectional side elevation illustrating a schematic structureof a first embodiment of a semiconductor device according to the presentinvention;

FIGS. 2A and 2B are perspective views of the semiconductor device shownin FIG. 1 for explaining the structure thereof, and particularly, forexplaining the rear surface side of a semiconductor package, and FIG. 2Cis a perspective view of the semiconductor device shown in FIG. 1 forexplaining the structure thereof, and particularly, for explaining thefront surface side of the semiconductor package;

FIG. 3 is a perspective view of a semiconductor chip illustrating asurface where the element is formed;

FIG. 4 is a perspective view of the semiconductor device for explainingthe rear surface side thereof;

FIG. 5 is a perspective view of the semiconductor device for explainingthe rear surface side thereof;

FIG. 6 is a sectional side elevation illustrating a schematic structureof a second embodiment of a semiconductor device according to thepresent invention;

FIG. 7 is a sectional side elevation illustrating a schematic structureof a third embodiment of a semiconductor device according to the presentinvention;

FIG. 8 is a sectional side elevation illustrating a schematic structureof an example of a conventional semiconductor device; and

FIG. 9 is a sectional side elevation illustrating a schematic structureof another example of a conventional semiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described in detail.

FIG. 1 illustrates a first embodiment of a semiconductor deviceaccording to a fourth aspect of the present invention. In FIG. 1,reference numeral 30 denotes a semiconductor device, and thesemiconductor device 30 is formed by mounting a semiconductor chip 32 ona semiconductor package 31. It is to be noted that the semiconductorpackage 31 in the semiconductor device 30 is a first embodiment of asemiconductor package according to the first aspect of the presentinvention.

In the semiconductor device 30, the semiconductor package 31 comprises arectangular substrate 33 for mounting the semiconductor chip 32 thereonto fix the side of a surface 32 a where the element is formed of thesemiconductor chip 32 to one side thereof, and a plurality of connectingpatterns 34 provided on the other side of the substrate 33. The materialof the substrate 33 is glass epoxy resin or the like. As shown in FIG.2A, an elongate opening 35 is formed along the longitudinal center lineof the substrate 33. The elongate opening 35 is formed as a rectangularopening from the one side to which the semiconductor chip 32 is fixed tothe other side. It is to be noted that, as shown in FIGS. 1 and 2A, therespective connecting patterns 34 are formed so as to extend fromlongitudinal edge portions of the substrate 33 to the elongate opening35, and are made of metal or the like and are conductive.

As shown in FIGS. 1 and 2B, an insulating film 36 covering theconnecting patterns 34 with the connecting patterns 34 being partlyexposed is formed on the other side of the substrate 33 on which theconnecting patterns 34 are formed. The insulating film 36 is made ofresist or the like, and is provided with end portions 34 a of theconnecting patterns 34 on the side of the elongate opening 35 andportions other than the end portions 34 a, in this example, end portions34 b opposite to the end portions 34 a, exposed, and with the elongateopening 35 left opened, i.e., without covering the elongate opening 35.

As shown in FIGS. 1 and 2C, a tape-like bonding material 37 is providedon the one side of the substrate 33 of the semiconductor package 31 thusstructured with a portion around the longitudinal center line of theelongate opening 35 being opened. The bonding material 37 is formed byapplying thermoplastic adhesive such as polyamideimide or thermosettingadhesive such as modified epoxy resin on both sides of a tape basematerial made of resin such as polyimide.

As shown in FIG. 1, the semiconductor chip 32 is mounted and fixed viathe bonding material 37 on the one side of the substrate 33. As shown inFIG. 3, the semiconductor chip 32 is like a rectangular plate with aplurality of electrodes 38 formed on the longitudinal center line of thesurface 32 a where the element is formed. The electrodes 38 are disposedwithin the elongate opening 35.

As shown in FIGS. 1 and 4, the electrodes 38 of the semiconductor chip32 disposed within the elongate opening 35 are connected to the endportions 34 a of the connecting patterns 34 via wires 39 through theelongate opening 35. By this, the electrodes 38 are electricallyconnected to the connecting patterns 34.

As shown in FIG. 1, external connecting terminals 40 such as solderballs are connected to the other exposed end portions 34 b of theconnecting patterns 34. By this structure, the electrodes 38 of thesemiconductor chip 32 are electrically connected to the externalconnecting terminals 40 via the wires 39 and the connecting patterns 34.

Further, as shown in FIGS. 1 and 5, the elongate opening 35 throughwhich the wires 39 for connecting the electrodes 38 to the connectingpatterns 34 are disposed is filled with insulating resin 41 covering theend portions 34 a of the connecting patterns 34. By this, the electrodes38, the wires 39, and the end portions 34 a of the connecting patterns34 are sealed and insulated from the external.

Next, a method of manufacturing the semiconductor device 30 thusstructured is described. It is to be noted that the example of amanufacturing method described herein is an embodiment according to aseventh aspect of the present invention.

First, the semiconductor package 31 shown in FIGS. 2A-C and thesemiconductor chip 32 shown in FIG. 3 are prepared. Here, the tape-likebonding material 37 provided on the one side of the substrate 33 of thesemiconductor package 31 may be provided on the side of thesemiconductor chip 32 instead of being provided on the side of thesubstrate 33.

Next, the semiconductor chip 32 is mounted on one side of thesemiconductor package 31 thus prepared with the electrodes 38 of thesemiconductor chip 32 being within the elongate opening 35. Next, byheating and pressurizing them with this state maintained, the substrate33 of the semiconductor package 31 and the surface 32 a where theelement is formed of the semiconductor chip 32 are made to closelyadhere to each other. By melting and solidifying, or by curing, theadhesive of the bonding material 37, the semiconductor chip 32 is fixedto the one side of the substrate 33.

Then, as shown in FIG. 4, wire bonding is carried out with respect tothe electrodes 38 within the elongate opening 35 in the substrate 33 andthe corresponding end portions 34 a of the connecting patterns 34 on theother side of the substrate 33. Next, the electrodes 38 are electricallyconnected to the connecting patterns 34 via the wires 39 through theelongate opening 35. It is to be noted that a conventionally used wirebonder may be used to carry out the wire bonding.

Then, as shown in FIG. 5, the elongate opening 35 is filled with theinsulating resin 41 such as epoxy resin, and the insulating resin 41 isapplied so as to cover the wires 38 and the end portions 34 a of theconnecting patterns 34 to seal all of the electrodes 38, the wires 39,and the end portions 34 a of the connecting patterns 34.

After that, the external connecting terminals 40 such as solder ballsare bonded to the respective end portions 34 b of the connectingpatterns 34 under high temperature to obtain the semiconductor device30.

With the semiconductor device 30 thus obtained, since the electrodes 38formed on the surface 32 a where the element is formed of thesemiconductor chip 32 and the connecting patterns 34 of the substrate 33are bonded with the wires 39 through the elongate opening 35, it is notnecessary to provide space for the wires 39 on the outer peripheral sideof the semiconductor chip 32, which leads to miniaturizing and thinningthe device as a whole.

Further, since the semiconductor chip 32 and the substrate 33 are bondedwith the wires, the wires 39 can absorb the difference of thecoefficient of thermal expansion between the semiconductor chip 32 andthe substrate 33, which makes it possible to use an inexpensive resinsubstrate instead of an expensive ceramics substrate.

FIG. 6 illustrates a second embodiment of a semiconductor deviceaccording to the fourth aspect of the present invention. The differencebetween a semiconductor device 50 in FIG. 6 and the semiconductor device30 shown in FIG. 1 resides in the structure of a semiconductor package51 in the semiconductor device 50. The semiconductor package 51 in thesemiconductor device 50 is a second embodiment of a semiconductorpackage according to the first aspect of the present invention. Thesemiconductor package 51 differs from the semiconductor package 31 shownin FIG. 1 in that its connecting patterns 52 are formed in a pluralityof stages (two stages in this example).

More specifically, a substrate 53 of the semiconductor package 51 isformed of an upper plate 53 a and a lower plate 53 b. The lower plate 53b is formed such that its edge on the side of an elongate opening 54 isoutside an edge of the upper plate 53 a. By this structure, the rearsurface (the other side) of the substrate 53 is formed to be in twostages, i.e., the rear surface of the upper plate 53 a and the rearsurface of the lower plate 53 b.

A first plurality of connecting patterns 52 a are provided on the rearsurface of the upper plate 53 a of the substrate 53. A second pluralityof connecting patterns 52 b are provided on the rear surface of thelower plate 53 b. The first and the second connecting patterns 52 a and52 b are electrically connected to each other via a wiring material 55provided so as to pierce the lower plate 53 b. By this structure, theconnecting patterns 52 are in two stages (a plurality of stages) formedby the first connecting patterns 52 a, the wiring material 55, and thesecond connecting patterns 52 b.

An insulating film 56 is formed on the rear surface of the lower plate53 b so as to cover the second connecting patterns 52 b. It is to benoted that, in this example also, the insulating film 56 is formed withthe second connecting patterns 52 b being partly exposed, that is,similarly to the one shown in FIG. 2B, with longitudinal end portions ofthe substrate 53 being exposed.

In the elongate opening 54 formed with the stages in the substrate 53formed of the upper plate 53 a and the lower plate 53 b in this way, theelectrodes 38 of the semiconductor chip 32 disposed within the elongateopening 54 are connected via the wires 39 to the end portions of thefirst connecting patterns 52 a exposed on the rear surface of the upperplate 53 a of the substrate 53. Further, the elongate opening 54 isfilled with insulating resin 57 covering the wires 39 and the endportions of the first connecting patterns 52 a. By this, the electrodes38, the wires 39, and the end portions of the first connecting patterns52 a are sealed and insulated from the external.

With the semiconductor device 50 thus structured, similarly to the caseof the semiconductor device 30 shown in FIG. 1, since it is notnecessary to provide space for the wires 39 on the outer peripheral sideof the semiconductor chip 32, the device can be miniaturized and thinnedas a whole. Further, since the wires 39 can absorb the difference of thecoefficient of thermal expansion between the semiconductor chip 32 andthe substrate 53, an inexpensive resin substrate can be used as thesubstrate 53.

Still further, since the substrate 53 is formed in two stages of theupper plate 53 a and the lower plate 53 b, and the connecting patterns52 are in two stages (a plurality of stages) formed by the firstconnecting patterns 52 a, the wiring material 55, and the secondconnecting patterns 52 b, such that the wires 39 are connected to theend portions to the central side of the substrate 53, that is, to theend portions provided on a stage on the side of the one side of thesubstrate 53, the wires 39 may be cased within the elongate opening 54without extending to the outside. By this, the wires 39 can be coveredwith the insulating resin 57 just by filling the elongate opening 54with the insulating resin 57 at the bottom of the substrate 53 withoutheaping up the insulating resin 57 on the rear surface of the lowerplate 53 b. Accordingly, the diameter of the external connectingterminals 40 such as solder balls can be made small, which leads tofiner pitch of the external connecting terminals 40.

FIG. 7 illustrates a third embodiment of a semiconductor deviceaccording to the fourth aspect of the present invention. The differencebetween a semiconductor device 60 in FIG. 7 and the semiconductor device30 shown in FIG. 1 resides in the structure of a semiconductor package61 in the semiconductor device 60. The semiconductor package 61 in thesemiconductor device 60 is a third embodiment of a semiconductor packageaccording to the first aspect of the present invention. Thesemiconductor package 61 differs from the semiconductor package 31 shownin FIG. 1 mainly in that a plurality of elongate openings 63, twoelongate openings 63 in this example, are formed in a substrate 62.

More specifically, two lines of the elongate openings 63 are formed inthe substrate 62 of the semiconductor package 61 along the longitudinaldirection of the substrate 62. Connecting patterns 64 are formed anddisposed so as to cross the elongate openings 63 from the outside of theelongate openings 63 (from the longitudinal sides of the substrate 62)to the central side of the elongate openings 63. Outside end portions ofthe connecting patterns 64 are covered with an insulating film 65 withpart of them being exposed toward the outside.

Two lines of electrodes 67 are formed on a surface where the element isformed of a semiconductor chip 66 mounted on the semiconductor package61 of the semiconductor device 60. The respective electrodes 67 aredisposed within either of the elongate openings 63 in the substrate 62.

The electrodes 67 are connected to the connecting patterns 64 via thewires 39 through the elongate openings 63. By this, the electrodes 67are electrically connected to external connecting terminals 68 connectedto the end portions of the connecting patterns 64.

Further, the elongate openings 63 are filled with insulating resin 69covering the wires 39 and the end portions of the connecting patterns 64on the side connected to the wires 39. By this, the electrodes 67, thewires 39, and the end portions of the connecting patterns 64 are sealedand insulated from the external.

With the semiconductor device 60 thus structured, similarly to the caseof the semiconductor device 30 shown in FIG. 1, since it is notnecessary to provide space for the wires 39 on the outer peripheral sideof the semiconductor chip 66, the device can be miniaturized and thinnedas a whole. Further, since the wires 39 can absorb the difference of thecoefficient of thermal expansion between the semiconductor chip 66 andthe substrate 62, an inexpensive resin substrate can be used as thesubstrate 62.

Still further, the semiconductor chip 66 in which the electrodes 67 aredisposed on the peripheral side instead of the central portion of thesemiconductor chip 66 as the semiconductor chip to be mounted on thesemiconductor package 61.

It is to be noted that though the tape-like bonding material 37 is usedto fix the semiconductor chip on the substrate of the semiconductorpackage in the embodiments described in the above, the present inventionis not limited thereto, and liquid adhesive such as epoxy resin may beused instead of the bonding material 37.

As described in the above, in the semiconductor package according to afirst aspect of the invention, since the elongate opening is formed inthe substrate and the connecting pattern is provided on the side of thesubstrate opposite to the side on which the surface where the element isformed of the semiconductor chip is mounted, an electrode formed on thesurface where the element is formed of the semiconductor chip and theconnecting pattern can be bonded with wires through the elongateopening. Accordingly, wires can be disposed without going around to theouter peripheral side of the semiconductor chip. This eliminates thenecessity of securing space for the wires on the outer peripheral sideof the semiconductor chip, and thus, a semiconductor device using thiscan be miniaturized and thinned.

Further, since wire bonding can be carried out, the wires can absorb thedifference of the coefficient of thermal expansion between thesemiconductor chip and the substrate, which makes it possible to use aninexpensive resin substrate instead of an expensive ceramics substrate.By this, the cost of the semiconductor device can be lowered.

In the semiconductor device according to the fourth aspect of theinvention, since the semiconductor package of the first aspect of thepresent invention is used, and the electrode formed on the surface wherethe element is formed of the semiconductor chip and the connectingpattern of the substrate are bonded with wires through the elongateopening, the wires can be disposed without going around to the outerperipheral side of the semiconductor chip. This eliminates the necessityof space for the wires on the outer peripheral side of the semiconductorchip, and thus, the device can be miniaturized and thinned as a whole.

Further, since the semiconductor chip and the substrate are bonded withthe wires, the wires can absorb the difference of the coefficient ofthermal expansion between the semiconductor chip and the substrate,which makes it possible to use an inexpensive resin substrate instead ofan expensive ceramics substrate. By this, the cost of the semiconductordevice can be lowered.

In the method of manufacturing a semiconductor device according to theseventh aspect of the invention, since the semiconductor package of thefirst aspect of the present invention is used, and the electrode formedon the surface where the element is formed of the semiconductor chip andthe connecting pattern of the substrate are bonded with wires throughthe elongate opening, the wires can be disposed without going around tothe outer peripheral side of the semiconductor chip. This eliminates thenecessity of space for the wires on the outer peripheral side of thesemiconductor chip, and thus, the device can be miniaturized and thinnedas a whole.

Further, since the semiconductor element and the substrate are bondedwith the wires, the wires can absorb the difference of the coefficientof thermal expansion between the semiconductor chip and the substrate,which makes it possible to use an inexpensive resin substrate instead ofan expensive ceramics substrate. By this, the cost of the semiconductordevice can be lowered.

1. A semiconductor device comprising: a substrate having a first surfaceand a second surface opposed to the first surface, said substratefurther having an elongate opening defined therethrough from the firstsurface to the second surface; a plurality of connecting patternslocated on the second surface of said substrate, each of said pluralityof connecting patterns having a wire connecting portion; a semiconductorchip having a surface; a tape bonding material, said semiconductor chipis mounted to the first surface of said substrate via said tape bondingmaterial; a plurality of electrodes located on the surface of saidsemiconductor chip and aligned with the elongate opening of saidsubstrate; a plurality of wires extending within the elongate opening ofsaid substrate, first ends of said plurality of wires being respectivelybonded to said plurality of electrodes, and second ends of saidplurality of wires being respectively bonded to corresponding ones ofthe wire connecting portions of said plurality of connecting patterns; aresist which covers the second surface of said substrate and saidplurality of connecting patterns, wherein the wire connecting portionsof said plurality of connecting patterns are exposed from said resist;and a resin which covers said plurality of electrodes, said plurality ofwires, and the wire connecting portions of said plurality of connectingpatterns.
 2. The semiconductor device of claim 1, wherein the tape basematerial of said bonding material is polyimide.
 3. The semiconductordevice of claim 1, wherein the material of said substrate is glass epoxyresin.
 4. The semiconductor device of claim 1, wherein said resist hasan opening at which the wire connecting portions of said plurality ofconnecting patterns are located.
 5. The semiconductor device of claim 1,wherein each of said plurality of connecting patterns has an externalconnecting portion exposed from said resist.
 6. The semiconductor deviceof claim 5, further comprising a plurality of external connectingpatterns respectively bonded to the external connecting portions of saidplurality of connecting patterns.
 7. The semiconductor device of claim5, wherein said resist has openings at which external connectingportions of said plurality of connecting patterns are respectivelylocated.
 8. The semiconductor device of claim 1, wherein the elongateopening is smaller than said semiconductor chip.
 9. The semiconductordevice of claim 6, wherein said resist extends out of elongate openingbeyond a height of said plurality of external connecting terminals arebonded.
 10. A semiconductor device comprising: a substrate having afirst surface and a second surface opposed to the first surface, saidsubstrate further having an elongate opening defined therethrough fromthe first surface to the second surface; a plurality of connectingpatterns located on the second surface of said substrate, each of saidplurality of connecting patterns having a wire connecting portion; asemiconductor chip having a surface which is mounted to the firstsurface of said substrate; a plurality of electrodes located on thesurface of said semiconductor chip and aligned with the elongate openingof said substrate; a plurality of wires extending within the elongateopening of said substrate, first ends of said plurality of wires beingrespectively bonded to said plurality of electrodes, and second ends ofsaid plurality of wires being respectively bonded to corresponding onesof the wire connecting portions of said plurality of connectingpatterns; a resist which covers the second surface of said substrate andsaid plurality of connecting patterns, wherein the bonding portions ofsaid plurality of connecting patterns are exposed from said resist; anda resin which covers said plurality of electrodes, said plurality ofwires, and the bonding portions of said plurality of connectingpatterns, the resin having a surface consisting of a flat portion and aslope portion surrounding the flat portion.
 11. The semiconductor deviceof claim 10, wherein the material of said substrate is glass epoxyresin.
 12. The semiconductor device of claim 10, wherein said resist hasan opening at which the wire connecting portions of said plurality ofconnecting patterns are located.
 13. The semiconductor device of claim10, wherein each of said plurality of connecting patterns has anexternal connecting portion exposed from said resist.
 14. Thesemiconductor device of claim 13, further comprising a plurality ofexternal connecting patterns respectively bonded to the externalconnecting portions of said plurality of connecting patterns.
 15. Thesemiconductor device of claim 13, wherein said resist has openings atwhich external connecting portions of said plurality of connectingpatterns are respectively located.
 16. The semiconductor device of claim10, wherein the elongate opening is smaller than said semiconductorchip.
 17. The semiconductor device of claim 15, wherein said resistextends out of elongate opening beyond a height of said plurality ofexternal connecting terminals are bonded.